Главное Дискретные полупроводниковые Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные IRF5210STRL
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IRF5210STRL
- International Rectifier
- Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
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- Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
- Date Sheet
Lagernummer 282400
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Surface Mount:YES
- Number of Terminals:2
- Transistor Element Material:SILICON
- Package Description:SMALL OUTLINE, R-PSSO-G2
- Package Style:SMALL OUTLINE
- Moisture Sensitivity Levels:1
- Package Body Material:PLASTIC/EPOXY
- Operating Temperature-Min:-55 °C
- Reflow Temperature-Max (s):30
- Operating Temperature-Max:175 °C
- Rohs Code:No
- Manufacturer Part Number:IRF5210STRL
- Package Shape:RECTANGULAR
- Manufacturer:International Rectifier
- Number of Elements:1
- Part Life Cycle Code:Obsolete
- Ihs Manufacturer:INTERNATIONAL RECTIFIER CORP
- Risk Rank:7.55
- Part Package Code:D2PAK
- Drain Current-Max (ID):38 A
- JESD-609 Code:e0
- Pbfree Code:No
- ECCN Code:EAR99
- Terminal Finish:Tin/Lead (Sn/Pb)
- Additional Feature:HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
- HTS Code:8541.29.00.95
- Subcategory:Other Transistors
- Terminal Position:SINGLE
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):225
- Reach Compliance Code:compliant
- Pin Count:3
- JESD-30 Code:R-PSSO-G2
- Qualification Status:Not Qualified
- Configuration:SINGLE WITH BUILT-IN DIODE
- Operating Mode:ENHANCEMENT MODE
- Case Connection:DRAIN
- Transistor Application:SWITCHING
- Polarity/Channel Type:P-CHANNEL
- JEDEC-95 Code:TO-263AB
- Drain Current-Max (Abs) (ID):40 A
- Drain-source On Resistance-Max:0.06 Ω
- Pulsed Drain Current-Max (IDM):140 A
- DS Breakdown Voltage-Min:100 V
- Avalanche Energy Rating (Eas):120 mJ
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs):200 W
Со склада 282400
Итого $0.00000