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IRF5210STRL

Lagernummer 282400

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы
  • Surface Mount:YES
  • Number of Terminals:2
  • Transistor Element Material:SILICON
  • Package Description:SMALL OUTLINE, R-PSSO-G2
  • Package Style:SMALL OUTLINE
  • Moisture Sensitivity Levels:1
  • Package Body Material:PLASTIC/EPOXY
  • Operating Temperature-Min:-55 °C
  • Reflow Temperature-Max (s):30
  • Operating Temperature-Max:175 °C
  • Rohs Code:No
  • Manufacturer Part Number:IRF5210STRL
  • Package Shape:RECTANGULAR
  • Manufacturer:International Rectifier
  • Number of Elements:1
  • Part Life Cycle Code:Obsolete
  • Ihs Manufacturer:INTERNATIONAL RECTIFIER CORP
  • Risk Rank:7.55
  • Part Package Code:D2PAK
  • Drain Current-Max (ID):38 A
  • JESD-609 Code:e0
  • Pbfree Code:No
  • ECCN Code:EAR99
  • Terminal Finish:Tin/Lead (Sn/Pb)
  • Additional Feature:HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
  • HTS Code:8541.29.00.95
  • Subcategory:Other Transistors
  • Terminal Position:SINGLE
  • Terminal Form:GULL WING
  • Peak Reflow Temperature (Cel):225
  • Reach Compliance Code:compliant
  • Pin Count:3
  • JESD-30 Code:R-PSSO-G2
  • Qualification Status:Not Qualified
  • Configuration:SINGLE WITH BUILT-IN DIODE
  • Operating Mode:ENHANCEMENT MODE
  • Case Connection:DRAIN
  • Transistor Application:SWITCHING
  • Polarity/Channel Type:P-CHANNEL
  • JEDEC-95 Code:TO-263AB
  • Drain Current-Max (Abs) (ID):40 A
  • Drain-source On Resistance-Max:0.06 Ω
  • Pulsed Drain Current-Max (IDM):140 A
  • DS Breakdown Voltage-Min:100 V
  • Avalanche Energy Rating (Eas):120 mJ
  • FET Technology:METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs):200 W

Со склада 282400

Итого $0.00000