BUZ32H3045A

Name: Infineon BUZ32H3045A
Brand: Infineon
Rating: 4.5 (18 reviews)

Infineon
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, GREEN, PLASTIC, TO-263, 3 PIN
Date Sheet

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Спецификация Часто задаваемые вопросы

Mounting Type：Surface Mount
Package / Case：TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Surface Mount：YES
Supplier Device Package：PG-TO263-3
Number of Terminals：2
Transistor Element Material：SILICON
Package：Bulk
Current - Continuous Drain (Id) @ 25℃：9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Mfr：Infineon Technologies
Power Dissipation (Max)：75W (Tc)
Product Status：Active
Moisture Sensitivity Levels：NOT SPECIFIED
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：NOT SPECIFIED
Rohs Code：Yes
Manufacturer Part Number：BUZ32H3045A
Package Shape：RECTANGULAR
Manufacturer：Rochester Electronics LLC
Number of Elements：1
Part Life Cycle Code：Active
Ihs Manufacturer：ROCHESTER ELECTRONICS LLC
Drain Current-Max (ID)：9.5 A
Part Package Code：D2PAK
Risk Rank：5.29
Package Style：SMALL OUTLINE
Package Description：GREEN, PLASTIC, TO-263, 3 PIN
Operating Temperature：-55°C ~ 150°C (TJ)
Series：SIPMOS®
Pbfree Code：Yes
Terminal Finish：NOT SPECIFIED
Additional Feature：AVALANCHE RATED
Technology：MOSFET (Metal Oxide)
Terminal Position：SINGLE
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：unknown
Pin Count：4
JESD-30 Code：R-PSSO-G2
Qualification Status：COMMERCIAL
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Case Connection：DRAIN
FET Type：N-Channel
Rds On (Max) @ Id, Vgs：400mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds：530 pF @ 25 V
Drain to Source Voltage (Vdss)：200 V
Vgs (Max)：±20V
Polarity/Channel Type：N-CHANNEL
JEDEC-95 Code：TO-263AA
Drain-source On Resistance-Max：0.4 Ω
Pulsed Drain Current-Max (IDM)：38 A
DS Breakdown Voltage-Min：200 V
Avalanche Energy Rating (Eas)：120 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：-

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