Главное Дискретные полупроводниковые Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные IRF540FI
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IRF540FI
- STMicroelectronics
- Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
- -
- 16A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
- Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Surface Mount:NO
- Number of Terminals:3
- Transistor Element Material:SILICON
- Package Description:TO-220, 3 PIN
- Package Style:FLANGE MOUNT
- Package Body Material:PLASTIC/EPOXY
- Reflow Temperature-Max (s):NOT SPECIFIED
- Operating Temperature-Max:175 °C
- Rohs Code:No
- Manufacturer Part Number:IRF540FI
- Risk Rank:5.65
- Part Package Code:SFM
- Drain Current-Max (ID):16 A
- Turn-off Time-Max (toff):230 ns
- Ihs Manufacturer:STMICROELECTRONICS
- Part Life Cycle Code:Obsolete
- Number of Elements:1
- Manufacturer:STMicroelectronics
- Package Shape:RECTANGULAR
- Turn-on Time-Max (ton):105 ns
- JESD-609 Code:e0
- ECCN Code:EAR99
- Terminal Finish:Tin/Lead (Sn/Pb)
- Subcategory:FET General Purpose Power
- Terminal Position:SINGLE
- Terminal Form:THROUGH-HOLE
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:not_compliant
- Pin Count:3
- JESD-30 Code:R-PSFM-T3
- Qualification Status:Not Qualified
- Configuration:SINGLE WITH BUILT-IN DIODE
- Operating Mode:ENHANCEMENT MODE
- Case Connection:ISOLATED
- Transistor Application:SWITCHING
- Polarity/Channel Type:N-CHANNEL
- JEDEC-95 Code:TO-220AB
- Drain Current-Max (Abs) (ID):10 A
- Drain-source On Resistance-Max:0.077 Ω
- Pulsed Drain Current-Max (IDM):112 A
- DS Breakdown Voltage-Min:100 V
- Avalanche Energy Rating (Eas):230 mJ
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs):40 W
- Feedback Cap-Max (Crss):100 pF
- Power Dissipation Ambient-Max:40 W
Со склада 0
Итого $0.00000