IRFS820B

Name: Fairchild Semiconductor IRFS820B
Brand: Fairchild Semiconductor
Rating: 5 (13 reviews)

Fairchild Semiconductor
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TO-220-3 Full Pack
Power Field-Effect Transistor, 2.5A I(D), 500V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
Date Sheet

Lagernummer 4853

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Surface Mount：NO
Supplier Device Package：TO-220F-3
Number of Terminals：3
Transistor Element Material：SILICON
Package：Bulk
Current - Continuous Drain (Id) @ 25℃：2.5A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：10V
Mfr：Fairchild Semiconductor
Power Dissipation (Max)：33W (Tc)
Product Status：Active
Package Description：TO-220F, 3 PIN
Package Style：FLANGE MOUNT
Moisture Sensitivity Levels：NOT APPLICABLE
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：NOT APPLICABLE
Rohs Code：Yes
Manufacturer Part Number：IRFS820B
Package Shape：RECTANGULAR
Manufacturer：Rochester Electronics LLC
Number of Elements：1
Part Life Cycle Code：Active
Ihs Manufacturer：ROCHESTER ELECTRONICS LLC
Risk Rank：5.19
Part Package Code：TO-220F
Drain Current-Max (ID)：2.5 A
Operating Temperature：-55°C ~ 150°C (TJ)
Series：-
JESD-609 Code：e3
Pbfree Code：Yes
Terminal Finish：MATTE TIN
Technology：MOSFET (Metal Oxide)
Terminal Position：SINGLE
Terminal Form：THROUGH-HOLE
Peak Reflow Temperature (Cel)：NOT APPLICABLE
Reach Compliance Code：unknown
Pin Count：3
JESD-30 Code：R-PSFM-T3
Qualification Status：COMMERCIAL
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Case Connection：ISOLATED
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：2.6Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds：610 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
Drain to Source Voltage (Vdss)：500 V
Vgs (Max)：±30V
Polarity/Channel Type：N-CHANNEL
Drain-source On Resistance-Max：2.6 Ω
Pulsed Drain Current-Max (IDM)：8 A
DS Breakdown Voltage-Min：500 V
Avalanche Energy Rating (Eas)：200 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：-

Со склада 4853

Итого $0.00000