IXTQ24N55Q

Name: IXYS IXTQ24N55Q
Brand: IXYS
Rating: 4.9 (6 reviews)

IXYS
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TO-3P-3
MOSFET 24 Amps 550V 0.270 Rds
Date Sheet

Lagernummer 26

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Package / Case：TO-3P-3
Surface Mount：NO
Number of Terminals：3
Transistor Element Material：SILICON
RoHS：Details
Mounting Styles：Through Hole
Transistor Polarity：N-Channel
Vds - Drain-Source Breakdown Voltage：550 V
Id - Continuous Drain Current：24 A
Rds On - Drain-Source Resistance：270 mOhms
Vgs - Gate-Source Voltage：- 30 V, + 30 V
Minimum Operating Temperature：- 55 C
Maximum Operating Temperature：+ 150 C
Pd - Power Dissipation：400 W
Channel Mode：Enhancement
Factory Pack QuantityFactory Pack Quantity：30
Typical Turn-Off Delay Time：46 ns
Typical Turn-On Delay Time：16 ns
Unit Weight：0.194007 oz
Package Description：FLANGE MOUNT, R-PSFM-T3
Package Style：FLANGE MOUNT
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：150 °C
Rohs Code：Yes
Manufacturer Part Number：IXTQ24N55Q
Package Shape：RECTANGULAR
Number of Elements：1
Part Life Cycle Code：Not Recommended
Ihs Manufacturer：LITTELFUSE INC
Risk Rank：5.39
Drain Current-Max (ID)：24 A
Packaging：Tube
Series：IXTQ24N55
JESD-609 Code：e3
Terminal Finish：Matte Tin (Sn)
Terminal Position：SINGLE
Terminal Form：THROUGH-HOLE
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：compliant
JESD-30 Code：R-PSFM-T3
Qualification Status：Not Qualified
Configuration：Single
Number of Channels：1 Channel
Operating Mode：ENHANCEMENT MODE
Case Connection：DRAIN
Transistor Application：SWITCHING
Rise Time：20 ns
Polarity/Channel Type：N-CHANNEL
Transistor Type：1 N-Channel
Drain-source On Resistance-Max：0.27 Ω
Pulsed Drain Current-Max (IDM)：96 A
DS Breakdown Voltage-Min：550 V
Avalanche Energy Rating (Eas)：1500 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
Height：20.3 mm
Length：15.8 mm
Width：4.9 mm

Со склада 26

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