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APT85GR120B2
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Microchip Technology
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Транзисторы - Модули IGBT
- TO-247-3
- IGBT Modules FG, IGBT, 1200V, 85A, TO-247 T-MAXView in Development Tools Selector
Date Sheet
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Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Package / Case：TO-247-3
- Mounting Type：Through Hole
- Supplier Device Package：T-MAX™
- RoHS：Details
- Collector- Emitter Voltage VCEO Max：1.2 kV
- Pd - Power Dissipation：962 W
- Minimum Operating Temperature：- 55 C
- Maximum Operating Temperature：+ 150 C
- Maximum Gate Emitter Voltage：30 V
- Mounting Styles：Through Hole
- Factory Pack QuantityFactory Pack Quantity：1
- Unit Weight：0.211644 oz
- Package：Tube
- Current-Collector (Ic) (Max)：170 A
- Base Product Number：APT85GR120
- Mfr：Microchip Technology
- Product Status：Active
- Test Conditions：600V, 85A, 4.3Ohm, 15V
- Packaging：Tube
- Operating Temperature：-55°C ~ 150°C (TJ)
- Series：-
- Configuration：Single
- Power Dissipation：962
- Input Type：Standard
- Power - Max：962 W
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 85A
- Continuous Collector Current：170
- IGBT Type：NPT
- Gate Charge：660 nC
- Current - Collector Pulsed (Icm)：340 A
- Td (on/off) @ 25°C：43ns/300ns
- Switching Energy：6mJ (on), 3.8mJ (off)
- Product：IGBT Silicon Modules
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