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Спецификация Часто задаваемые вопросы
  • Package / Case:DP
  • Surface Mount:YES
  • Number of Terminals:2
  • Transistor Element Material:SILICON
  • Vds - Drain-Source Breakdown Voltage:40 V
  • Vgs th - Gate-Source Threshold Voltage:1 V to 7 V
  • Pd - Power Dissipation:35 W
  • Transistor Polarity:N-Channel
  • Maximum Operating Temperature:+ 150 C
  • Vgs - Gate-Source Voltage:20 V
  • Factory Pack QuantityFactory Pack Quantity:25
  • Mounting Styles:SMD/SMT
  • Manufacturer:TT Electronics
  • Brand:Semelab / TT Electronics
  • Id - Continuous Drain Current:6 A
  • Package Description:FLANGE MOUNT, S-CDFM-F2
  • Package Style:FLANGE MOUNT
  • Package Body Material:CERAMIC, METAL-SEALED COFIRED
  • Reflow Temperature-Max (s):NOT SPECIFIED
  • Operating Temperature-Max:200 °C
  • Rohs Code:Yes
  • Manufacturer Part Number:D2205UK
  • Package Shape:SQUARE
  • Number of Elements:1
  • Part Life Cycle Code:Active
  • Ihs Manufacturer:SEMELAB LTD
  • Risk Rank:5.12
  • Drain Current-Max (ID):6 A
  • JESD-609 Code:e4
  • Pbfree Code:No
  • ECCN Code:EAR99
  • Type:RF Power MOSFET
  • Terminal Finish:GOLD
  • Additional Feature:LOW NOISE
  • Subcategory:MOSFETs
  • Technology:Si
  • Terminal Position:DUAL
  • Terminal Form:FLAT
  • Peak Reflow Temperature (Cel):NOT SPECIFIED
  • Reach Compliance Code:compliant
  • Pin Count:3
  • JESD-30 Code:S-CDFM-F2
  • Qualification Status:Not Qualified
  • Operating Frequency:1 GHz
  • Configuration:Single
  • Operating Mode:ENHANCEMENT MODE
  • Case Connection:SOURCE
  • Output Power:7.5 W
  • Transistor Application:AMPLIFIER
  • Polarity/Channel Type:N-CHANNEL
  • Product Type:RF MOSFET Transistors
  • Transistor Type:DMOS FET
  • Gain:10 dB
  • DS Breakdown Voltage-Min:40 V
  • FET Technology:METAL-OXIDE SEMICONDUCTOR
  • Highest Frequency Band:ULTRA HIGH FREQUENCY BAND
  • Product Category:RF MOSFET Transistors
  • Width:6.35 mm
  • Height:5.08 mm
  • Length:18.92 mm

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