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MMBFJ112
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ON Semiconductor
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Транзисторы - JFET
- TO-236-3, SC-59, SOT-23-3
- JFET N-CH 35V 0.35W SOT-23
Date Sheet
Lagernummer 71649
- 1+： $0.36602
- 10+： $0.34530
- 100+： $0.32575
- 500+： $0.30732
- 1000+： $0.28992
Zwischensummenbetrag $0.36602
Спецификация Часто задаваемые вопросы
- Factory Lead Time：42 Weeks
- Lifecycle Status：ACTIVE (Last Updated: 11 hours ago)
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Mounting Type：Surface Mount
- Mount：Surface Mount
- Contact Plating：Tin
- Number of Pins：3
- Weight：30mg
- Transistor Element Material：SILICON
- Number of Elements：1
- Breakdown Voltage / V：-35V
- Published：2000
- Packaging：Tape & Reel (TR)
- Operating Temperature：-55°C~150°C TJ
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Voltage - Rated DC：35V
- Max Power Dissipation：350mW
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Current Rating：5mA
- Base Part Number：MBFJ112
- Number of Channels：1
- Element Configuration：Single
- Operating Mode：DEPLETION MODE
- Power Dissipation：350mW
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Drain to Source Voltage (Vdss)：35V
- Continuous Drain Current (ID)：5mA
- Gate to Source Voltage (Vgs)：-35V
- FET Technology：JUNCTION
- Max Junction Temperature (Tj)：150°C
- Drain to Source Resistance：50Ohm
- Feedback Cap-Max (Crss)：5 pF
- Current - Drain (Idss) @ Vds (Vgs=0)：5mA @ 15V
- Voltage - Cutoff (VGS off) @ Id：1V @ 1μA
- Resistance - RDS(On)：50Ohm
- Width：1.3mm
- Length：2.92mm
- Height：1.11mm
- RoHS Status：ROHS3 Compliant
- Radiation Hardening：No
- REACH SVHC：No SVHC
- Lead Free：Lead Free
Со склада 71649
- 1+： $0.36602
- 10+： $0.34530
- 100+： $0.32575
- 500+： $0.30732
- 1000+： $0.28992
Итого $0.36602
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