Изображение служит лишь для справки
MMBF4393LT1G
-
ON Semiconductor
-
Транзисторы - JFET
- TO-236-3, SC-59, SOT-23-3
- JFET N-CH 30V 0.225W SOT23
Date Sheet
Lagernummer 10853
- 1+： $0.28649
- 10+： $0.27027
- 100+： $0.25497
- 500+： $0.24054
- 1000+： $0.22692
Zwischensummenbetrag $0.28649
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE (Last Updated: 21 hours ago)
- Factory Lead Time：8 Weeks
- Contact Plating：Tin
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Surface Mount：YES
- Number of Pins：3
- Weight：1.437803g
- Transistor Element Material：SILICON
- Breakdown Voltage / V：-30V
- Number of Elements：1
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tape & Reel (TR)
- Published：2000
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Resistance：100Ohm
- HTS Code：8541.21.00.95
- Voltage - Rated DC：30V
- Max Power Dissipation：225mW
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：260
- Current Rating：50mA
- Time@Peak Reflow Temperature-Max (s)：40
- Base Part Number：MBF4393
- Pin Count：3
- Element Configuration：Single
- Operating Mode：DEPLETION MODE
- Power Dissipation：225mW
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Halogen Free：Halogen Free
- Input Capacitance (Ciss) (Max) @ Vds：14pF @ 15V
- Continuous Drain Current (ID)：1μA
- Gate to Source Voltage (Vgs)：30V
- Drain to Source Breakdown Voltage：30V
- FET Technology：JUNCTION
- Drain to Source Resistance：100Ohm
- Current - Drain (Idss) @ Vds (Vgs=0)：5mA @ 15V
- Voltage - Cutoff (VGS off) @ Id：500mV @ 10nA
- Resistance - RDS(On)：100Ohm
- Height：1.016mm
- Length：3.0226mm
- Width：1.397mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
Со склада 10853
- 1+： $0.28649
- 10+： $0.27027
- 100+： $0.25497
- 500+： $0.24054
- 1000+： $0.22692
Итого $0.28649
Центр поддержки
услуга покупки
пункты договора
Корпорация Whisyee
Контакты