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MMBFU310LT1G
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ON Semiconductor
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Транзисторы - JFET
- TO-236-3, SC-59, SOT-23-3
- JFET N-CH 25V 0.225W SOT23
Date Sheet
Lagernummer 4664
- 1+： $0.32535
- 10+： $0.30693
- 100+： $0.28956
- 500+： $0.27317
- 1000+： $0.25771
Zwischensummenbetrag $0.32535
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE (Last Updated: 3 days ago)
- Factory Lead Time：2 Weeks
- Contact Plating：Tin
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Surface Mount：YES
- Number of Pins：3
- Weight：1.437803g
- Transistor Element Material：SILICON
- Breakdown Voltage / V：-25V
- Number of Elements：1
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tape & Reel (TR)
- Published：2011
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Voltage - Rated DC：25V
- Max Power Dissipation：225mW
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：260
- Current Rating：10mA
- Time@Peak Reflow Temperature-Max (s)：40
- Base Part Number：MBFU310
- Pin Count：3
- Element Configuration：Single
- Operating Mode：DEPLETION MODE
- Power Dissipation：225mW
- FET Type：N-Channel
- Transistor Application：AMPLIFIER
- Halogen Free：Halogen Free
- Input Capacitance (Ciss) (Max) @ Vds：5pF @ 10V VGS
- Continuous Drain Current (ID)：60mA
- Gate to Source Voltage (Vgs)：25V
- Drain to Source Breakdown Voltage：25V
- FET Technology：JUNCTION
- Feedback Cap-Max (Crss)：2.5 pF
- Highest Frequency Band：ULTRA HIGH FREQUENCY B
- Current - Drain (Idss) @ Vds (Vgs=0)：24mA @ 10V
- Voltage - Cutoff (VGS off) @ Id：2.5V @ 1nA
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
Со склада 4664
- 1+： $0.32535
- 10+： $0.30693
- 100+： $0.28956
- 500+： $0.27317
- 1000+： $0.25771
Итого $0.32535
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