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FGL40N120ANDTU
- ON Semiconductor
- Транзисторы - IGBT - Одинарные
- TO-264-3, TO-264AA
- Trans IGBT Chip N-CH 1.2KV 64A 3-Pin(3+Tab) TO-264 Rail
- Date Sheet
Lagernummer 24
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status:ACTIVE (Last Updated: 6 days ago)
- Factory Lead Time:4 Weeks
- Contact Plating:Tin
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-264-3, TO-264AA
- Number of Pins:3
- Weight:6.756g
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:1.2kV
- Number of Elements:1
- Test Conditions:600V, 40A, 5 Ω, 15V
- Turn Off Delay Time:110 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tube
- Published:2008
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Not For New Designs
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- HTS Code:8541.29.00.95
- Voltage - Rated DC:1.2kV
- Max Power Dissipation:500W
- Current Rating:64A
- Element Configuration:Single
- Power Dissipation:500W
- Input Type:Standard
- Turn On Delay Time:15 ns
- Transistor Application:POWER CONTROL
- Rise Time:20ns
- Polarity/Channel Type:N-CHANNEL
- Collector Emitter Voltage (VCEO):1.2kV
- Max Collector Current:64A
- Reverse Recovery Time:112 ns
- Voltage - Collector Emitter Breakdown (Max):1200V
- Turn On Time:45 ns
- Vce(on) (Max) @ Vge, Ic:3.2V @ 15V, 40A
- Max Junction Temperature (Tj):150°C
- Continuous Collector Current:64A
- Turn Off Time-Nom (toff):165 ns
- IGBT Type:NPT
- Gate Charge:220nC
- Current - Collector Pulsed (Icm):160A
- Td (on/off) @ 25°C:15ns/110ns
- Switching Energy:2.3mJ (on), 1.1mJ (off)
- Height:29mm
- Length:20mm
- Width:5mm
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
Со склада 24
Итого $0.00000