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HGTG30N60A4D
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ON Semiconductor
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Транзисторы - IGBT - Одинарные
- TO-247-3
- FAIRCHILD SEMICONDUCTOR HGTG30N60A4DIGBT Single Transistor, General Purpose, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 Pins
Date Sheet
Lagernummer 24
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE, NOT REC (Last Updated: 2 days ago)
- Factory Lead Time：5 Weeks
- Contact Plating：Tin
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Number of Pins：3
- Weight：6.39g
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：600V
- Number of Elements：1
- Test Conditions：390V, 30A, 3 Ω, 15V
- Turn Off Delay Time：150 ns
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tube
- Published：2016
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Not For New Designs
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Additional Feature：LOW CONDUCTION LOSS
- HTS Code：8541.29.00.95
- Voltage - Rated DC：600V
- Max Power Dissipation：463W
- Current Rating：30A
- Base Part Number：HGTG30N60
- Element Configuration：Single
- Power Dissipation：463W
- Case Connection：COLLECTOR
- Input Type：Standard
- Turn On Delay Time：25 ns
- Transistor Application：POWER CONTROL
- Rise Time：12s
- Polarity/Channel Type：N-CHANNEL
- Collector Emitter Voltage (VCEO)：600V
- Max Collector Current：75A
- Reverse Recovery Time：55ns
- Turn On Time：35 ns
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 30A
- Turn Off Time-Nom (toff)：238 ns
- Gate Charge：225nC
- Current - Collector Pulsed (Icm)：240A
- Td (on/off) @ 25°C：25ns/150ns
- Switching Energy：280μJ (on), 240μJ (off)
- Height：20.82mm
- Length：15.87mm
- Width：4.82mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
Со склада 24
Итого $0.00000
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