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IXGH30N120B3D1
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IXYS
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Транзисторы - IGBT - Одинарные
- TO-247-3
- IGBT 1200V 300W TO247AD
Date Sheet
Lagernummer 292
- 1+： $10.09296
- 10+： $9.52166
- 100+： $8.98270
- 500+： $8.47424
- 1000+： $7.99457
Zwischensummenbetrag $10.09296
Спецификация Часто задаваемые вопросы
- Factory Lead Time：20 Weeks
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Number of Pins：3
- Weight：6.500007g
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：1.2kV
- Number of Elements：1
- Test Conditions：960V, 30A, 5 Ω, 15V
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tube
- Series：GenX3™
- Published：2008
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- Additional Feature：LOW CONDUCTION LOSS
- Max Power Dissipation：300W
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- Base Part Number：IXG*30N120
- Pin Count：3
- Qualification Status：Not Qualified
- Element Configuration：Single
- Power Dissipation：300W
- Case Connection：COLLECTOR
- Input Type：Standard
- Transistor Application：POWER CONTROL
- Polarity/Channel Type：N-CHANNEL
- Collector Emitter Voltage (VCEO)：1.2kV
- Max Collector Current：150A
- Reverse Recovery Time：100ns
- JEDEC-95 Code：TO-247AD
- Voltage - Collector Emitter Breakdown (Max)：1200V
- Turn On Time：56 ns
- Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 30A
- Turn Off Time-Nom (toff)：471 ns
- IGBT Type：PT
- Gate Charge：87nC
- Td (on/off) @ 25°C：16ns/127ns
- Switching Energy：3.47mJ (on), 2.16mJ (off)
- Gate-Emitter Voltage-Max：20V
- Gate-Emitter Thr Voltage-Max：5V
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
Со склада 292
- 1+： $10.09296
- 10+： $9.52166
- 100+： $8.98270
- 500+： $8.47424
- 1000+： $7.99457
Итого $10.09296
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