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STGW20NC60VD
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STMicroelectronics
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Транзисторы - IGBT - Одинарные
- TO-247-3
- STMICROELECTRONICS STGW20NC60VD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time：8 Weeks
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Number of Pins：3
- Weight：38.000013g
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：600V
- Number of Elements：1
- Test Conditions：390V, 20A, 3.3 Ω, 15V
- Turn Off Delay Time：100 ns
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tube
- Series：PowerMESH™
- JESD-609 Code：e3
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Additional Feature：ULTRA FAST
- Voltage - Rated DC：600V
- Max Power Dissipation：200W
- Current Rating：30A
- Base Part Number：STGW20
- Pin Count：3
- Element Configuration：Single
- Power Dissipation：200W
- Input Type：Standard
- Turn On Delay Time：31 ns
- Transistor Application：POWER CONTROL
- Rise Time：11.5ns
- Polarity/Channel Type：N-CHANNEL
- Collector Emitter Voltage (VCEO)：600V
- Max Collector Current：60A
- Reverse Recovery Time：44ns
- Turn On Time：42.5 ns
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
- Continuous Collector Current：30A
- Turn Off Time-Nom (toff)：280 ns
- Gate Charge：100nC
- Current - Collector Pulsed (Icm)：150A
- Td (on/off) @ 25°C：31ns/100ns
- Switching Energy：220μJ (on), 330μJ (off)
- Gate-Emitter Voltage-Max：20V
- Gate-Emitter Thr Voltage-Max：5.75V
- Height：20.15mm
- Length：15.75mm
- Width：5.15mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
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