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IXGT50N90B2

Lagernummer 31

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы
  • Factory Lead Time:8 Weeks
  • Mount:Surface Mount
  • Mounting Type:Surface Mount
  • Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Weight:4.500005g
  • Transistor Element Material:SILICON
  • Collector-Emitter Breakdown Voltage:900V
  • Number of Elements:1
  • Test Conditions:720V, 50A, 5 Ω, 15V
  • Operating Temperature:-55°C~150°C TJ
  • Packaging:Tube
  • Series:HiPerFAST™
  • Published:2005
  • JESD-609 Code:e3
  • Pbfree Code:yes
  • Part Status:Active
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:2
  • Terminal Finish:PURE TIN
  • Max Power Dissipation:400W
  • Terminal Form:GULL WING
  • Peak Reflow Temperature (Cel):NOT SPECIFIED
  • Reach Compliance Code:unknown
  • Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
  • Base Part Number:IXG*50N90
  • Pin Count:4
  • JESD-30 Code:R-PSSO-G2
  • Qualification Status:Not Qualified
  • Element Configuration:Single
  • Case Connection:COLLECTOR
  • Input Type:Standard
  • Power - Max:400W
  • Transistor Application:POWER CONTROL
  • Polarity/Channel Type:N-CHANNEL
  • Collector Emitter Voltage (VCEO):900V
  • Max Collector Current:75A
  • Turn On Time:48 ns
  • Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 50A
  • Turn Off Time-Nom (toff):820 ns
  • IGBT Type:PT
  • Gate Charge:135nC
  • Current - Collector Pulsed (Icm):200A
  • Td (on/off) @ 25°C:20ns/350ns
  • Switching Energy:4.7mJ (off)
  • RoHS Status:ROHS3 Compliant

Со склада 31

Итого $0.00000