FGH60N60SMD

Name: ON Semiconductor FGH60N60SMD
Brand: ON Semiconductor
Price: 5.2147575 USD
Availability: InStock
Rating: 4.7 (13 reviews)

Lagernummer 1733

1+： $5.21476
10+： $4.91958
100+： $4.64112
500+： $4.37841
1000+： $4.13058

Zwischensummenbetrag $5.21476

Спецификация Часто задаваемые вопросы

Lifecycle Status：ACTIVE (Last Updated: 5 days ago)
Factory Lead Time：5 Weeks
Contact Plating：Tin
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-247-3
Number of Pins：3
Weight：6.39g
Transistor Element Material：SILICON
Collector-Emitter Breakdown Voltage：600V
Number of Elements：1
Test Conditions：400V, 60A, 3 Ω, 15V
Turn Off Delay Time：146 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tube
Published：2013
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Additional Feature：LOW CONDUCTION LOSS
HTS Code：8541.29.00.95
Max Power Dissipation：600W
Base Part Number：FGH60N60
Rise Time-Max：70ns
Element Configuration：Single
Case Connection：COLLECTOR
Input Type：Standard
Turn On Delay Time：27 ns
Power - Max：600W
Transistor Application：POWER CONTROL
Polarity/Channel Type：N-CHANNEL
Collector Emitter Voltage (VCEO)：600V
Max Collector Current：120A
Reverse Recovery Time：39 ns
JEDEC-95 Code：TO-247AB
Turn On Time：59 ns
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 60A
Turn Off Time-Nom (toff)：163 ns
IGBT Type：Field Stop
Gate Charge：189nC
Current - Collector Pulsed (Icm)：180A
Td (on/off) @ 25°C：18ns/104ns
Switching Energy：1.26mJ (on), 450μJ (off)
Gate-Emitter Voltage-Max：20V
Gate-Emitter Thr Voltage-Max：6V
Fall Time-Max (tf)：68ns
Height：20.6mm
Length：15.6mm
Width：4.7mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

Со склада 1733

1+： $5.21476
10+： $4.91958
100+： $4.64112
500+： $4.37841
1000+： $4.13058

Итого $5.21476