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JANTXV1N5186
- Microsemi Corporation
- Диоды - Выпрямители - Одинарные
- B, Axial
- DIODE GEN PURP 100V 3A AXIAL
- Date Sheet
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Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status:IN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time:14 Weeks
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:B, Axial
- Diode Element Material:SILICON
- Number of Elements:1
- Packaging:Bulk
- Series:Military, MIL-PRF-19500/424
- Published:1997
- JESD-609 Code:e0
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- Terminal Finish:Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier
- Max Operating Temperature:175°C
- Min Operating Temperature:-65°C
- Applications:FAST RECOVERY POWER
- HTS Code:8541.10.00.80
- Terminal Form:WIRE
- Pin Count:2
- Reference Standard:MIL-19500/424A
- JESD-30 Code:O-XALF-W2
- Qualification Status:Qualified
- Element Configuration:Single
- Speed:Standard Recovery >500ns, > 200mA (Io)
- Diode Type:Standard
- Current - Reverse Leakage @ Vr:2μA @ 100V
- Voltage - Forward (Vf) (Max) @ If:1.5V @ 9A
- Case Connection:ISOLATED
- Forward Current:3A
- Operating Temperature - Junction:-65°C~175°C
- Output Current-Max:3A
- Number of Phases:1
- Reverse Recovery Time:150 ns
- Peak Reverse Current:2μA
- Max Repetitive Reverse Voltage (Vrrm):100V
- Peak Non-Repetitive Surge Current:80A
- Radiation Hardening:No
- RoHS Status:Non-RoHS Compliant
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