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APTGT200DA120D3G
- Microsemi Corporation
- Транзисторы - Модули IGBT
- D-3 Module
- IGBT MODULE 1200V 300A 1050W D3
- Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time:36 Weeks
- Mount:Chassis Mount, Screw
- Mounting Type:Chassis Mount
- Package / Case:D-3 Module
- Number of Pins:5
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:1.2kV
- Number of Elements:1
- Operating Temperature:-40°C~150°C TJ
- Published:2012
- JESD-609 Code:e1
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:7
- ECCN Code:EAR99
- Terminal Finish:TIN SILVER COPPER
- Max Power Dissipation:1.05kW
- Terminal Position:UPPER
- Terminal Form:UNSPECIFIED
- Pin Count:7
- JESD-30 Code:R-XUFM-X7
- Configuration:Single
- Case Connection:ISOLATED
- Power - Max:1050W
- Transistor Application:MOTOR CONTROL
- Polarity/Channel Type:N-CHANNEL
- Input:Standard
- Collector Emitter Voltage (VCEO):1.2kV
- Max Collector Current:300A
- Current - Collector Cutoff (Max):6mA
- Voltage - Collector Emitter Breakdown (Max):1200V
- Input Capacitance:14nF
- Turn On Time:400 ns
- Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 200A
- Turn Off Time-Nom (toff):830 ns
- IGBT Type:Trench Field Stop
- NTC Thermistor:No
- Input Capacitance (Cies) @ Vce:14nF @ 25V
- RoHS Status:RoHS Compliant
Со склада 0
Итого $0.00000