NUS5530MNR2G

Name: ON Semiconductor NUS5530MNR2G
Brand: ON Semiconductor
Price: 1.6279911 USD
Availability: InStock
Rating: 4.6 (18 reviews)

ON Semiconductor
Транзисторы - Специального назначения
8-VDFN Exposed Pad
Integrated Power MOSFET with PNP 8-Pin DFN EP T/R
Date Sheet

Lagernummer 42

1+： $1.62799
10+： $1.53584
100+： $1.44891
500+： $1.36689
1000+： $1.28952

Zwischensummenbetrag $1.62799

Спецификация Часто задаваемые вопросы

Lifecycle Status：ACTIVE (Last Updated: 5 days ago)
Factory Lead Time：2 Weeks
Mounting Type：Surface Mount
Package / Case：8-VDFN Exposed Pad
Surface Mount：YES
Number of Pins：8
Number of Elements：1
Voltage Rated：35V PNP 20V P-Channel
Packaging：Tape & Reel (TR)
Published：2006
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Max Operating Temperature：150°C
Min Operating Temperature：-55°C
Applications：General Purpose
Current Rating (Amps)：2A PNP 3.9A P-Channel
Max Power Dissipation：2.5W
Peak Reflow Temperature (Cel)：260
Current Rating：3.9A
Time@Peak Reflow Temperature-Max (s)：40
Base Part Number：NUS5530MN
Pin Count：8
Rise Time-Max：55ns
Element Configuration：Dual
Operating Mode：ENHANCEMENT MODE
Power Dissipation：635mW
Transistor Application：SWITCHING
Halogen Free：Halogen Free
Transistor Type：NPN, P-Channel
Collector Emitter Voltage (VCEO)：35V
Max Collector Current：2A
Continuous Drain Current (ID)：-3.9A
Gate to Source Voltage (Vgs)：-35V
Max Frequency：100MHz
Pulsed Drain Current-Max (IDM)：20A
DS Breakdown Voltage-Min：20V
FET Technology：METAL-OXIDE SEMICONDUCTOR
Collector Base Voltage (VCBO)：-55V
Emitter Base Voltage (VEBO)：-5V
DC Current Gain-Min (hFE)：100
Drain to Source Resistance：200Ohm
VCEsat-Max：0.3 V
Fall Time-Max (tf)：70ns
Height：950μm
Length：3.3mm
Width：3.3mm
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

Со склада 42

1+： $1.62799
10+： $1.53584
100+： $1.44891
500+： $1.36689
1000+： $1.28952

Итого $1.62799