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MMBTH81
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ON Semiconductor
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Транзисторы - Биполярные (BJT) - РЧ
- TO-236-3, SC-59, SOT-23-3
- MMBTH81 Series 20 V CE Breakdown .05 A PNP RF Transistor - SOT-23
Date Sheet
Lagernummer 64115
- 1+： $0.27622
- 10+： $0.26058
- 100+： $0.24583
- 500+： $0.23192
- 1000+： $0.21879
Zwischensummenbetrag $0.27622
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time：42 Weeks
- Contact Plating：Tin
- Mount：Surface Mount
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Number of Pins：3
- Weight：30mg
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：20V
- Number of Elements：1
- hFEMin：60
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tape & Reel (TR)
- Published：2000
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Voltage - Rated DC：-20V
- Max Power Dissipation：225mW
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Current Rating：-50mA
- Frequency：600MHz
- Base Part Number：MMBTH81
- Element Configuration：Single
- Power Dissipation：225mW
- Transistor Application：AMPLIFIER
- Gain Bandwidth Product：600MHz
- Polarity/Channel Type：PNP
- Transistor Type：PNP
- Collector Emitter Voltage (VCEO)：20V
- Max Collector Current：50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 5mA 10V
- Transition Frequency：600MHz
- Max Breakdown Voltage：20V
- Collector Base Voltage (VCBO)：20V
- Emitter Base Voltage (VEBO)：3V
- Max Junction Temperature (Tj)：150°C
- Continuous Collector Current：50mA
- Collector-Base Capacitance-Max：0.85pF
- Height：1.11mm
- Length：2.92mm
- Width：1.3mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
Со склада 64115
- 1+： $0.27622
- 10+： $0.26058
- 100+： $0.24583
- 500+： $0.23192
- 1000+： $0.21879
Итого $0.27622
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