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BFR106E6327HTSA1
- Infineon Technologies
- Транзисторы - Биполярные (BJT) - РЧ
- TO-236-3, SC-59, SOT-23-3
- TRANSISTOR RF NPN 15V SOT-23
- Date Sheet
Lagernummer 24343
- 1+: $0.18739
- 10+: $0.17679
- 100+: $0.16678
- 500+: $0.15734
- 1000+: $0.14843
Zwischensummenbetrag $0.18739
Спецификация Часто задаваемые вопросы
- Factory Lead Time:99 Weeks
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Number of Pins:3
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:15V
- Number of Elements:1
- hFEMin:70
- Operating Temperature:150°C TJ
- Packaging:Tape & Reel (TR)
- Published:2012
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Voltage - Rated DC:15V
- Max Power Dissipation:700mW
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Current Rating:210mA
- Frequency:5GHz
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Base Part Number:BFR106
- Qualification Status:Not Qualified
- Element Configuration:Single
- Power Dissipation:700mW
- Transistor Application:AMPLIFIER
- Halogen Free:Not Halogen Free
- Polarity/Channel Type:NPN
- Transistor Type:NPN
- Collector Emitter Voltage (VCEO):16V
- Max Collector Current:210mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 70mA 8V
- Gain:8.5dB ~ 13dB
- Transition Frequency:5000MHz
- Max Breakdown Voltage:12V
- Collector Base Voltage (VCBO):20V
- Emitter Base Voltage (VEBO):3V
- Max Junction Temperature (Tj):150°C
- Noise Figure (dB Typ @ f):1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
- Height:1.1mm
- Length:2.9mm
- Width:1.3mm
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
Со склада 24343
- 1+: $0.18739
- 10+: $0.17679
- 100+: $0.16678
- 500+: $0.15734
- 1000+: $0.14843
Итого $0.18739