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PD55008-E
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STMicroelectronics
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Транзисторы - Полевые (FET), МОП-транзисторы - РЧ
- PowerSO-10 Exposed Bottom Pad
- FET RF 40V 500MHZ PWRSO10
Date Sheet
Lagernummer 1920
- 1+： $12.36984
- 10+： $11.66966
- 100+： $11.00911
- 500+： $10.38596
- 1000+： $9.79807
Zwischensummenbetrag $12.36984
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time：25 Weeks
- Mount：Surface Mount
- Package / Case：PowerSO-10 Exposed Bottom Pad
- Number of Pins：3
- Number of Elements：1
- Usage Level：Military grade
- Packaging：Tube
- JESD-609 Code：e3
- Part Status：Active
- Moisture Sensitivity Level (MSL)：3 (168 Hours)
- Number of Terminations：2
- ECCN Code：EAR99
- Terminal Finish：Matte Tin (Sn) - annealed
- Max Operating Temperature：165°C
- Min Operating Temperature：-65°C
- Additional Feature：HIGH RELIABILITY
- Voltage - Rated DC：40V
- Max Power Dissipation：52.8W
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：250
- Current Rating：4A
- Frequency：500MHz
- Time@Peak Reflow Temperature-Max (s)：30
- Base Part Number：PD55008
- Pin Count：10
- JESD-30 Code：R-PDSO-G2
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：52.8W
- Case Connection：SOURCE
- Current - Test：150mA
- Transistor Application：AMPLIFIER
- Drain to Source Voltage (Vdss)：40V
- Polarity/Channel Type：N-CHANNEL
- Transistor Type：LDMOS
- Continuous Drain Current (ID)：4A
- Gate to Source Voltage (Vgs)：20V
- Max Output Power：8W
- Drain Current-Max (Abs) (ID)：4A
- Drain to Source Breakdown Voltage：40V
- Input Capacitance：58pF
- FET Technology：METAL-OXIDE SEMICONDUCTOR
- Voltage - Test：12.5V
- Min Breakdown Voltage：40V
- Power Gain：17dB
- Height：3.5mm
- Length：7.5mm
- Width：9.4mm
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
Со склада 1920
- 1+： $12.36984
- 10+： $11.66966
- 100+： $11.00911
- 500+： $10.38596
- 1000+： $9.79807
Итого $12.36984
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