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PD20010-E
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STMicroelectronics
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Транзисторы - Полевые (FET), МОП-транзисторы - РЧ
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Trans RF MOSFET N-CH 40V 5A 3-Pin PowerSO-10RF (Formed lead) Tube
Date Sheet
Lagernummer 4680
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE (Last Updated: 7 months ago)
- Factory Lead Time：25 Weeks
- Mount：Surface Mount
- Package / Case：PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Number of Pins：3
- Number of Elements：1
- Packaging：Tube
- Part Status：Active
- Moisture Sensitivity Level (MSL)：3 (168 Hours)
- Number of Terminations：2
- ECCN Code：EAR99
- Max Operating Temperature：165°C
- Min Operating Temperature：-65°C
- Additional Feature：ESD PROTECTION, HIGH RELIABILITY
- Max Power Dissipation：59W
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Current Rating：5A
- Frequency：2GHz
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- Base Part Number：PD20010
- Pin Count：10
- JESD-30 Code：R-PDSO-G2
- Qualification Status：Not Qualified
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：59W
- Case Connection：SOURCE
- Current - Test：150mA
- Transistor Application：AMPLIFIER
- Drain to Source Voltage (Vdss)：40V
- Polarity/Channel Type：N-CHANNEL
- Transistor Type：LDMOS
- Continuous Drain Current (ID)：5A
- Gate to Source Voltage (Vgs)：15V
- Gain：11dB
- Max Output Power：15W
- Drain Current-Max (Abs) (ID)：5A
- Drain to Source Breakdown Voltage：40V
- Power - Output：10W
- FET Technology：METAL-OXIDE SEMICONDUCTOR
- Voltage - Test：13.6V
- RoHS Status：ROHS3 Compliant
Со склада 4680
Итого $0.00000
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