MMBT2907ALT1G

Name: ON Semiconductor MMBT2907ALT1G
Brand: ON Semiconductor
Rating: 4.5 (9 reviews)

ON Semiconductor
Транзисторы - Биполярные (BJT) - Одинарные
TO-236-3, SC-59, SOT-23-3
TRANS PNP 60V 0.6A SOT23
Date Sheet

Lagernummer 23881

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：10 Weeks
Contact Plating：Tin
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Surface Mount：YES
Number of Pins：3
Transistor Element Material：SILICON
Collector-Emitter Breakdown Voltage：-60V
Current-Collector (Ic) (Max)：600mA
Number of Elements：1
hFEMin：100
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：2006
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Type：General Purpose
Voltage - Rated DC：-60V
Max Power Dissipation：300mW
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：-600mA
Frequency：200MHz
Time@Peak Reflow Temperature-Max (s)：40
Base Part Number：MMBT2907A
Pin Count：3
Element Configuration：Single
Power Dissipation：225mW
Transistor Application：SWITCHING
Gain Bandwidth Product：200MHz
Transistor Type：PNP
Collector Emitter Voltage (VCEO)：-60V
Max Collector Current：-600mA
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA 10V
Current - Collector Cutoff (Max)：10nA ICBO
Vce Saturation (Max) @ Ib, Ic：1.6V @ 50mA, 500mA
Transition Frequency：200MHz
Max Breakdown Voltage：60V
Collector Base Voltage (VCBO)：-60V
Emitter Base Voltage (VEBO)：-5V
Max Junction Temperature (Tj)：150°C
Turn On Time-Max (ton)：45ns
Height：1.11mm
Length：2.9mm
Width：1.3mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

Со склада 23881

Итого $0.00000