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PN2907ATF
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ON Semiconductor
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Транзисторы - Биполярные (BJT) - Одинарные
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- PNP/60V/600MA
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time：7 Weeks
- Contact Plating：Tin
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins：3
- Weight：240mg
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：60V
- Number of Elements：1
- hFEMin：100
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tape & Reel (TR)
- Published：2017
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Voltage - Rated DC：-60V
- Max Power Dissipation：625mW
- Terminal Position：BOTTOM
- Current Rating：-800mA
- Frequency：200MHz
- Base Part Number：PN2907A
- Element Configuration：Single
- Power Dissipation：625mW
- Transistor Application：SWITCHING
- Gain Bandwidth Product：200MHz
- Polarity/Channel Type：PNP
- Transistor Type：PNP
- Collector Emitter Voltage (VCEO)：60V
- Max Collector Current：800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA 10V
- Current - Collector Cutoff (Max)：20nA ICBO
- Vce Saturation (Max) @ Ib, Ic：1.6V @ 50mA, 500mA
- Transition Frequency：200MHz
- Max Breakdown Voltage：60V
- Collector Base Voltage (VCBO)：-60V
- Emitter Base Voltage (VEBO)：-5V
- Turn On Time-Max (ton)：45ns
- Height：5.33mm
- Length：5.2mm
- Width：4.19mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
Со склада 0
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