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MMBT6520LT1G
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ON Semiconductor
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Транзисторы - Биполярные (BJT) - Одинарные
- TO-236-3, SC-59, SOT-23-3
- TRANS PNP 350V 0.5A SOT23
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE (Last Updated: 5 days ago)
- Factory Lead Time：8 Weeks
- Contact Plating：Tin
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Surface Mount：YES
- Number of Pins：3
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：350V
- Number of Elements：1
- hFEMin：20
- Operating Temperature：-55°C~150°C TJ
- Packaging：Cut Tape (CT)
- Published：2004
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Voltage - Rated DC：-350V
- Max Power Dissipation：225mW
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：260
- Current Rating：-500mA
- Frequency：200MHz
- Time@Peak Reflow Temperature-Max (s)：40
- Base Part Number：MMBT6520
- Pin Count：3
- Element Configuration：Single
- Power Dissipation：300mW
- Power - Max：225mW
- Transistor Application：SWITCHING
- Gain Bandwidth Product：200MHz
- Polarity/Channel Type：PNP
- Transistor Type：PNP
- Collector Emitter Voltage (VCEO)：350V
- Max Collector Current：500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 50mA 10V
- Current - Collector Cutoff (Max)：50nA ICBO
- Vce Saturation (Max) @ Ib, Ic：1V @ 5mA, 50mA
- Transition Frequency：40MHz
- Max Breakdown Voltage：350V
- Collector Base Voltage (VCBO)：350V
- Emitter Base Voltage (VEBO)：5V
- Height：1.11mm
- Length：3.04mm
- Width：2.64mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
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