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2N5191G
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ON Semiconductor
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Транзисторы - Биполярные (BJT) - Одинарные
- TO-225AA, TO-126-3
- ON SEMICONDUCTOR - 2N5191G - TRANSISTOR, NPN, TO-225
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time：2 Weeks
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Surface Mount：NO
- Number of Pins：3
- Weight：4.535924g
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：60V
- Number of Elements：1
- hFEMin：25
- Operating Temperature：-65°C~150°C TJ
- Packaging：Bulk
- Published：2005
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Voltage - Rated DC：60V
- Max Power Dissipation：40W
- Peak Reflow Temperature (Cel)：260
- Current Rating：4A
- Frequency：2MHz
- Time@Peak Reflow Temperature-Max (s)：40
- Base Part Number：2N5191
- Pin Count：3
- Element Configuration：Single
- Power Dissipation：40W
- Transistor Application：SWITCHING
- Halogen Free：Halogen Free
- Gain Bandwidth Product：2MHz
- Polarity/Channel Type：NPN
- Transistor Type：NPN
- Collector Emitter Voltage (VCEO)：60V
- Max Collector Current：4A
- DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 1.5A 2V
- Current - Collector Cutoff (Max)：1mA
- Vce Saturation (Max) @ Ib, Ic：1.4V @ 1A, 4A
- Transition Frequency：2MHz
- Collector Base Voltage (VCBO)：60V
- Emitter Base Voltage (VEBO)：5V
- Height：6.35mm
- Length：31.75mm
- Width：6.35mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
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