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MPSA05RA
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ON Semiconductor
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Транзисторы - Биполярные (BJT) - Одинарные
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Trans GP BJT NPN 60V 0.5A 3-Pin TO-92 T/R
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time：15 Weeks
- Contact Plating：Copper, Silver, Tin
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins：3
- Weight：201mg
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：60V
- Number of Elements：1
- hFEMin：100
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tape & Reel (TR)
- Published：2002
- JESD-609 Code：e1
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin/Silver/Copper (Sn/Ag/Cu)
- Voltage - Rated DC：60V
- Max Power Dissipation：625mW
- Terminal Position：BOTTOM
- Current Rating：500mA
- Frequency：100MHz
- Base Part Number：MPSA05
- Element Configuration：Single
- Power Dissipation：625mW
- Transistor Application：AMPLIFIER
- Gain Bandwidth Product：100MHz
- Polarity/Channel Type：NPN
- Transistor Type：NPN
- Collector Emitter Voltage (VCEO)：60V
- Max Collector Current：500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 100mA 1V
- Current - Collector Cutoff (Max)：100μA ICBO
- Vce Saturation (Max) @ Ib, Ic：250mV @ 10mA, 100mA
- Transition Frequency：100MHz
- Max Breakdown Voltage：60V
- Collector Base Voltage (VCBO)：60V
- Emitter Base Voltage (VEBO)：4V
- Height：4.58mm
- Length：4.58mm
- Width：3.86mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
Со склада 0
Итого $0.00000
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