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SS8550DTA
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ON Semiconductor
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Транзисторы - Биполярные (BJT) - Одинарные
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Bipolar (BJT) Single Transistor, PNP, -25 V, 200 MHz, 1 W, -1.5 A, 160
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE (Last Updated: 3 days ago)
- Factory Lead Time：6 Weeks
- Contact Plating：Tin
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins：3
- Weight：240mg
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：25V
- Number of Elements：1
- hFEMin：85
- Operating Temperature：150°C TJ
- Packaging：Tape & Box (TB)
- Published：2007
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Voltage - Rated DC：-25V
- Max Power Dissipation：1W
- Terminal Position：BOTTOM
- Current Rating：-1.5A
- Frequency：200MHz
- Base Part Number：SS8550
- Element Configuration：Single
- Power Dissipation：1W
- Transistor Application：AMPLIFIER
- Gain Bandwidth Product：200MHz
- Polarity/Channel Type：PNP
- Transistor Type：PNP
- Collector Emitter Voltage (VCEO)：25V
- Max Collector Current：1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 100mA 1V
- Current - Collector Cutoff (Max)：100nA
- Vce Saturation (Max) @ Ib, Ic：500mV @ 80mA, 800mA
- Transition Frequency：200MHz
- Max Breakdown Voltage：25V
- Collector Base Voltage (VCBO)：-40V
- Emitter Base Voltage (VEBO)：-6V
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
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