SI7414DN-T1-E3

Name: Vishay Siliconix SI7414DN-T1-E3
Brand: Vishay Siliconix
Rating: 4.7 (9 reviews)

Vishay Siliconix
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
PowerPAK® 1212-8
MOSFET N-CH 60V 5.6A 1212-8
Date Sheet

Lagernummer 43903

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Factory Lead Time：14 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：PowerPAK® 1212-8
Number of Pins：8
Transistor Element Material：SILICON
Manufacturer Package Identifier：SI7414DN-T1-E3
Current - Continuous Drain (Id) @ 25℃：5.6A Ta
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：1.5W Ta
Turn Off Delay Time：30 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：TrenchFET®
Published：2008
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：5
ECCN Code：EAR99
Resistance：25mOhm
Terminal Finish：Matte Tin (Sn)
Terminal Position：DUAL
Terminal Form：C BEND
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：40
Pin Count：8
JESD-30 Code：S-XDSO-C5
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：1.5W
Case Connection：DRAIN
Turn On Delay Time：15 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：25m Ω @ 8.7A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
Rise Time：12ns
Vgs (Max)：±20V
Fall Time (Typ)：12 ns
Continuous Drain Current (ID)：5.6A
Threshold Voltage：3V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：60V
Pulsed Drain Current-Max (IDM)：30A
Max Junction Temperature (Tj)：150°C
Nominal Vgs：3 V
Height：1.12mm
Length：3.05mm
Width：3.05mm
REACH SVHC：Unknown
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

Со склада 43903

Итого $0.00000