Главное Дискретные полупроводниковые Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные IXTP3N50D2
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IXTP3N50D2
- IXYS
- Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
- TO-220-3
- MOSFET N-CH 500V 3A TO220AB
- Date Sheet
Lagernummer 79
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time:24 Weeks
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:3A Tc
- Number of Elements:1
- Power Dissipation (Max):125W Tc
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tube
- Published:2009
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- Additional Feature:UL RECOGNIZED
- Terminal Position:SINGLE
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Pin Count:3
- JESD-30 Code:R-PSFM-T3
- Qualification Status:Not Qualified
- Configuration:SINGLE WITH BUILT-IN DIODE
- Case Connection:DRAIN
- FET Type:N-Channel
- Transistor Application:AMPLIFIER
- Rds On (Max) @ Id, Vgs:1.5 Ω @ 1.5A, 0V
- Input Capacitance (Ciss) (Max) @ Vds:1070pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:40nC @ 5V
- Drain to Source Voltage (Vdss):500V
- Vgs (Max):±20V
- Continuous Drain Current (ID):3A
- JEDEC-95 Code:TO-220AB
- FET Feature:Depletion Mode
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
Со склада 79
Итого $0.00000