AUIRFR48Z

Name: Infineon Technologies AUIRFR48Z
Brand: Infineon Technologies
Rating: 5 (8 reviews)

Infineon Technologies
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 55V 42A DPAK
Date Sheet

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Спецификация Часто задаваемые вопросы

Factory Lead Time：26 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：42A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：91W Tc
Turn Off Delay Time：40 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tube
Series：HEXFET®
Published：2010
JESD-609 Code：e3
Part Status：Discontinued
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：11MOhm
Additional Feature：AVALANCHE RATED, ULTRA-LOW RESISTANCE
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：30
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：91W
Case Connection：DRAIN
Turn On Delay Time：15 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：11m Ω @ 37A, 10V
Vgs(th) (Max) @ Id：4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds：1720pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：60nC @ 10V
Rise Time：61ns
Vgs (Max)：±20V
Fall Time (Typ)：35 ns
Continuous Drain Current (ID)：42A
Threshold Voltage：2V
JEDEC-95 Code：TO-252AA
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：55V
Pulsed Drain Current-Max (IDM)：250A
Height：2.39mm
Length：6.73mm
Width：6.22mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

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