Изображение служит лишь для справки
KM416V4104AS-5
- Samsung Semiconductor
- Память
- -
- EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
- Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Surface Mount:YES
- Number of Terminals:50
- Rohs Code:No
- Part Life Cycle Code:Obsolete
- Ihs Manufacturer:SAMSUNG SEMICONDUCTOR INC
- Part Package Code:TSOP2
- Package Description:TSOP2, TSOP50,.46,32
- Access Time-Max:50 ns
- Number of Words:4194304 words
- Number of Words Code:4000000
- Operating Temperature-Max:70 °C
- Package Body Material:PLASTIC/EPOXY
- Package Code:TSOP2
- Package Equivalence Code:TSOP50,.46,32
- Package Shape:RECTANGULAR
- Package Style:SMALL OUTLINE, THIN PROFILE
- Supply Voltage-Nom (Vsup):3.3 V
- JESD-609 Code:e0
- Pbfree Code:No
- ECCN Code:EAR99
- Terminal Finish:TIN LEAD
- Additional Feature:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
- HTS Code:8542.32.00.02
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Number of Functions:1
- Terminal Pitch:0.8 mm
- Reach Compliance Code:unknown
- Pin Count:50
- JESD-30 Code:R-PDSO-G50
- Qualification Status:Not Qualified
- Supply Voltage-Max (Vsup):3.6 V
- Temperature Grade:COMMERCIAL
- Supply Voltage-Min (Vsup):3 V
- Number of Ports:1
- Operating Mode:ASYNCHRONOUS
- Supply Current-Max:0.15 mA
- Organization:4MX16
- Output Characteristics:3-STATE
- Seated Height-Max:1.2 mm
- Memory Width:16
- Standby Current-Max:0.0005 A
- Memory Density:67108864 bit
- I/O Type:COMMON
- Memory IC Type:EDO DRAM
- Refresh Cycles:4096
- Access Mode:FAST PAGE WITH EDO
- Self Refresh:NO
- Length:20.95 mm
- Width:10.16 mm
Со склада 0
Итого $0.00000