Главное Дискретные полупроводниковые Транзисторы - Биполярные (BJT) - Массивы, предварительно смещенные BCR22PNH6327XTSA1
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BCR22PNH6327XTSA1
- Infineon Technologies
- Транзисторы - Биполярные (BJT) - Массивы, предварительно смещенные
- 6-VSSOP, SC-88, SOT-363
- Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R
- Date Sheet
Lagernummer 94583
- 1+: $0.12191
- 10+: $0.11501
- 100+: $0.10850
- 500+: $0.10236
- 1000+: $0.09656
Zwischensummenbetrag $0.12191
Спецификация Часто задаваемые вопросы
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:6-VSSOP, SC-88, SOT-363
- Number of Pins:6
- Collector-Emitter Breakdown Voltage:50V
- Number of Elements:2
- hFEMin:50
- Packaging:Tape & Reel (TR)
- Published:2011
- JESD-609 Code:e3
- Part Status:Not For New Designs
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:6
- ECCN Code:EAR99
- Max Operating Temperature:150°C
- Min Operating Temperature:-65°C
- Additional Feature:BUILT IN BIAS RESISTANCE RATIO IS 1
- Max Power Dissipation:250mW
- Terminal Form:GULL WING
- Base Part Number:BCR22PN
- Reference Standard:AEC-Q101
- Polarity:NPN, PNP
- Element Configuration:Dual
- Power Dissipation:250mW
- Transistor Application:SWITCHING
- Halogen Free:Halogen Free
- Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO):300mV
- Max Collector Current:100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 5mA 5V
- Vce Saturation (Max) @ Ib, Ic:300mV @ 500μA, 10mA
- Transition Frequency:130MHz
- Max Breakdown Voltage:50V
- Frequency - Transition:130MHz
- Resistor - Base (R1):22k Ω
- Resistor - Emitter Base (R2):22k Ω
- Height:800μm
- Length:2mm
- Width:1.25mm
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
Со склада 94583
- 1+: $0.12191
- 10+: $0.11501
- 100+: $0.10850
- 500+: $0.10236
- 1000+: $0.09656
Итого $0.12191