Главное Дискретные полупроводниковые Транзисторы - Биполярные (BJT) - Массивы, предварительно смещенные NSBC144WPDP6T5G
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NSBC144WPDP6T5G
- ON Semiconductor
- Транзисторы - Биполярные (BJT) - Массивы, предварительно смещенные
- SOT-963
- Bipolar Transistors - Pre-Biased SOT-963 COMP NBRT
- Date Sheet
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Спецификация Часто задаваемые вопросы
- Lifecycle Status:ACTIVE (Last Updated: 1 week ago)
- Factory Lead Time:8 Weeks
- Mounting Type:Surface Mount
- Package / Case:SOT-963
- Surface Mount:YES
- Number of Pins:6
- Collector-Emitter Breakdown Voltage:50V
- Number of Elements:2
- hFEMin:80
- Packaging:Tape & Reel (TR)
- Published:2012
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:6
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Max Operating Temperature:150°C
- Min Operating Temperature:-55°C
- Additional Feature:BUILT IN BIAS RESISTOR RATIO 2.1
- Max Power Dissipation:339mW
- Terminal Form:FLAT
- Pin Count:6
- Element Configuration:Single
- Power Dissipation:231mW
- Transistor Application:SWITCHING
- Polarity/Channel Type:NPN AND PNP
- Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO):50V
- Max Collector Current:100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA 10V
- Current - Collector Cutoff (Max):500nA
- Vce Saturation (Max) @ Ib, Ic:250mV @ 300μA, 10mA
- Resistor - Base (R1):47k Ω
- Continuous Collector Current:100mA
- Resistor - Emitter Base (R2):22k Ω
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
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