BCR112E6327HTSA1

Name: Infineon Technologies BCR112E6327HTSA1
Brand: Infineon Technologies
Price: 0.1664235 USD
Availability: InStock
Rating: 4.8 (17 reviews)

Infineon Technologies
Транзисторы - Биполярные (BJT) - Одинарные, предварительно смещенные
TO-236-3, SC-59, SOT-23-3
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R
Date Sheet

Lagernummer 96272

1+： $0.16642
10+： $0.15700
100+： $0.14812
500+： $0.13973
1000+： $0.13182

Zwischensummenbetrag $0.16642

Спецификация Часто задаваемые вопросы

Factory Lead Time：26 Weeks
Package / Case：TO-236-3, SC-59, SOT-23-3
Mounting Type：Surface Mount
Mount：Surface Mount
Contact Plating：Tin
Number of Pins：3
hFEMin：20
Number of Elements：1
Collector-Emitter Breakdown Voltage：50V
Published：2011
Packaging：Tape & Reel (TR)
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Not For New Designs
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Max Operating Temperature：150°C
Min Operating Temperature：-65°C
Voltage - Rated DC：50V
Max Power Dissipation：200mW
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：100mA
Base Part Number：BCR112
Polarity：NPN
Element Configuration：Single
Power Dissipation：200mW
Transistor Application：SWITCHING
Halogen Free：Not Halogen Free
Transistor Type：NPN - Pre-Biased
Collector Emitter Voltage (VCEO)：50V
Max Collector Current：100mA
DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 5mA 5V
Current - Collector Cutoff (Max)：100nA ICBO
Vce Saturation (Max) @ Ib, Ic：300mV @ 500μA, 10mA
Transition Frequency：140MHz
Max Breakdown Voltage：50V
Frequency - Transition：140MHz
Collector Base Voltage (VCBO)：50V
Max Junction Temperature (Tj)：150°C
Resistor - Base (R1)：4.7 k Ω
Resistor - Emitter Base (R2)：4.7 k Ω
Width：1.3mm
Length：2.9mm
Height：1.1mm
RoHS Status：ROHS3 Compliant
Radiation Hardening：No
Lead Free：Lead Free

Со склада 96272

1+： $0.16642
10+： $0.15700
100+： $0.14812
500+： $0.13973
1000+： $0.13182

Итого $0.16642