Главное Дискретные полупроводниковые Транзисторы - Биполярные (BJT) - Одинарные, предварительно смещенные DDTA114WE-7-F
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DDTA114WE-7-F
- Diodes Incorporated
- Транзисторы - Биполярные (BJT) - Одинарные, предварительно смещенные
- SOT-523
- TRANS PREBIAS PNP 150MW SOT523
- Date Sheet
Lagernummer 2855
- 1+: $0.40829
- 10+: $0.38517
- 100+: $0.36337
- 500+: $0.34280
- 1000+: $0.32340
Zwischensummenbetrag $0.40829
Спецификация Часто задаваемые вопросы
- Factory Lead Time:16 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:SOT-523
- Number of Pins:3
- Weight:2.012816mg
- Collector-Emitter Breakdown Voltage:50V
- Number of Elements:1
- hFEMin:24
- Packaging:Tape & Reel (TR)
- Published:2007
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Terminal Finish:Matte Tin (Sn)
- Max Operating Temperature:150°C
- Min Operating Temperature:-55°C
- Additional Feature:BUILT-IN BIAS RESISTOR RATIO IS 0.47
- HTS Code:8541.21.00.75
- Max Power Dissipation:150mW
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Time@Peak Reflow Temperature-Max (s):40
- Base Part Number:DDTA114
- Pin Count:3
- Qualification Status:Not Qualified
- Polarity:PNP
- Element Configuration:Single
- Transistor Type:PNP - Pre-Biased
- Collector Emitter Voltage (VCEO):300mV
- Max Collector Current:100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:24 @ 10mA 5V
- Current - Collector Cutoff (Max):500nA
- Vce Saturation (Max) @ Ib, Ic:300mV @ 250μA, 5mA
- Transition Frequency:250MHz
- Max Breakdown Voltage:50V
- Frequency - Transition:250MHz
- Resistor - Base (R1):10 k Ω
- Continuous Collector Current:100mA
- Resistor - Emitter Base (R2):4.7 k Ω
- Height:750μm
- Length:1.6mm
- Width:800μm
- RoHS Status:ROHS3 Compliant
Со склада 2855
- 1+: $0.40829
- 10+: $0.38517
- 100+: $0.36337
- 500+: $0.34280
- 1000+: $0.32340
Итого $0.40829