SQ3457EV-T1_BE3

Name: Vishay Siliconix SQ3457EV-T1_BE3
Brand: Vishay Siliconix
Price: 0.7695873 USD
Availability: InStock
Rating: 4.7 (19 reviews)

Vishay Siliconix
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
SOT-23-6 Thin, TSOT-23-6
MOSFET P-CHANNEL 30V 6.8A 6TSOP
Date Sheet

Lagernummer 2154

1+： $0.76959
10+： $0.72603
100+： $0.68493
500+： $0.64616
1000+： $0.60959

Zwischensummenbetrag $0.76959

Спецификация Часто задаваемые вопросы

Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：6-TSOP
Mfr：Vishay Siliconix
Product Status：Active
Current - Continuous Drain (Id) @ 25℃：6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Power Dissipation (Max)：5W (Tc)
Base Product Number：SQ3457
Vds - Drain-Source Breakdown Voltage：30 V
Typical Turn-On Delay Time：6 ns
Vgs th - Gate-Source Threshold Voltage：2.5 V
Pd - Power Dissipation：5 W
Transistor Polarity：P-Channel
Maximum Operating Temperature：+ 175 C
Vgs - Gate-Source Voltage：- 20 V, + 20 V
Minimum Operating Temperature：- 55 C
Factory Pack QuantityFactory Pack Quantity：3000
Mounting Styles：SMD/SMT
Channel Mode：Enhancement
Part # Aliases：SQ3457EV-T1_GE3
Manufacturer：Vishay
Brand：Vishay / Siliconix
Qg - Gate Charge：14 nC
Tradename：TrenchFET
Rds On - Drain-Source Resistance：35 mOhms
RoHS：Details
Typical Turn-Off Delay Time：18 ns
Id - Continuous Drain Current：6.8 A
Operating Temperature：-55°C ~ 175°C (TJ)
Packaging：MouseReel
Subcategory：MOSFETs
Number of Channels：1 Channel
FET Type：P-Channel
Rds On (Max) @ Id, Vgs：65mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：705 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
Rise Time：9 ns
Drain to Source Voltage (Vdss)：30 V
Vgs (Max)：±20V
Product Type：MOSFET
Transistor Type：1 P-Channel
FET Feature：-
Product Category：MOSFET

Со склада 2154

1+： $0.76959
10+： $0.72603
100+： $0.68493
500+： $0.64616
1000+： $0.60959

Итого $0.76959