SIHA186N60EF-GE3

Name: Vishay Siliconix SIHA186N60EF-GE3
Brand: Vishay Siliconix
Rating: 4.5 (10 reviews)

Vishay Siliconix
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TO-220-3 Full Pack
MOSFET N-CH 600V 8.4A TO220
Date Sheet

Lagernummer 1420

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO-220 Full Pack
Mfr：Vishay Siliconix
Package：Tube
Product Status：Active
Current - Continuous Drain (Id) @ 25℃：8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Power Dissipation (Max)：156W (Tc)
Base Product Number：SIHA186
Number of Elements per Chip：1
Package Type：TO-220
MSL：MSL 1 - Unlimited
Qualification：-
Continuous Drain Current Id：8.4A
Vds - Drain-Source Breakdown Voltage：650 V
Typical Turn-On Delay Time：28 ns
Vgs th - Gate-Source Threshold Voltage：5 V
Pd - Power Dissipation：156 W
Transistor Polarity：N-Channel
Maximum Operating Temperature：+ 150 C
Vgs - Gate-Source Voltage：- 30 V, + 30 V
Unit Weight：0.068784 oz
Minimum Operating Temperature：- 55 C
Factory Pack QuantityFactory Pack Quantity：1000
Mounting Styles：Through Hole
Forward Transconductance - Min：5.4 S
Channel Mode：Enhancement
Manufacturer：Vishay
Brand：Vishay / Siliconix
Qg - Gate Charge：32 nC
Rds On - Drain-Source Resistance：193 mOhms
RoHS：Details
Typical Turn-Off Delay Time：50 ns
Id - Continuous Drain Current：8.4 A
Series：EF
Operating Temperature：-55°C ~ 150°C (TJ)
Packaging：Tube
Subcategory：MOSFETs
Pin Count：3
Configuration：Single
Number of Channels：1 Channel
Power Dissipation：156W
FET Type：N-Channel
Rds On (Max) @ Id, Vgs：193mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1081 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs：32 nC @ 10 V
Rise Time：46 ns
Drain to Source Voltage (Vdss)：600 V
Vgs (Max)：±30V
Product Type：MOSFET
Transistor Type：1 N - Channel
Channel Type：N
FET Feature：-
Product Category：MOSFET

Со склада 1420

Итого $0.00000