Главное Дискретные полупроводниковые Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные BSL302SNL6327
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BSL302SNL6327
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Infineon
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Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
- SOT-23-6 Thin, TSOT-23-6
- Small Signal Field-Effect Transistor, 7.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Surface Mount：YES
- Supplier Device Package：PG-TSOP6-6-6
- Number of Terminals：6
- Transistor Element Material：SILICON
- Package：Bulk
- Current - Continuous Drain (Id) @ 25℃：7.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Mfr：Infineon Technologies
- Power Dissipation (Max)：2W (Ta)
- Product Status：Active
- Package Description：SMALL OUTLINE, R-PDSO-G6
- Package Style：SMALL OUTLINE
- Moisture Sensitivity Levels：1
- Package Body Material：PLASTIC/EPOXY
- Reflow Temperature-Max (s)：40
- Operating Temperature-Max：150 °C
- Rohs Code：Yes
- Manufacturer Part Number：BSL302SNL6327
- Package Shape：RECTANGULAR
- Manufacturer：Infineon Technologies AG
- Number of Elements：1
- Part Life Cycle Code：Obsolete
- Ihs Manufacturer：INFINEON TECHNOLOGIES AG
- Risk Rank：5.81
- Part Package Code：TSOP
- Drain Current-Max (ID)：7.1 A
- Operating Temperature：-55°C ~ 150°C (TJ)
- Series：OptiMOS™ 2
- JESD-609 Code：e3
- Pbfree Code：Yes
- ECCN Code：EAR99
- Terminal Finish：MATTE TIN
- Subcategory：FET General Purpose Power
- Technology：MOSFET (Metal Oxide)
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：260
- Reach Compliance Code：compliant
- Pin Count：6
- JESD-30 Code：R-PDSO-G6
- Qualification Status：Not Qualified
- Configuration：SINGLE WITH BUILT-IN DIODE
- Operating Mode：ENHANCEMENT MODE
- FET Type：N-Channel
- Rds On (Max) @ Id, Vgs：25mOhm @ 7.1A, 10V
- Vgs(th) (Max) @ Id：2V @ 30µA
- Input Capacitance (Ciss) (Max) @ Vds：750 pF @ 15 V
- Gate Charge (Qg) (Max) @ Vgs：6.6 nC @ 5 V
- Drain to Source Voltage (Vdss)：30 V
- Vgs (Max)：±20V
- Polarity/Channel Type：N-CHANNEL
- Drain Current-Max (Abs) (ID)：7.1 A
- Drain-source On Resistance-Max：0.025 Ω
- DS Breakdown Voltage-Min：30 V
- FET Technology：METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)：2 W
- FET Feature：-
- Feedback Cap-Max (Crss)：43 pF
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