Главное Дискретные полупроводниковые Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные AUIRFR120ZTR
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AUIRFR120ZTR
- Infineon
- Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
- -
- Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
- Date Sheet
Lagernummer 26735
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Surface Mount:YES
- Number of Terminals:2
- Transistor Element Material:SILICON
- Package Description:SMALL OUTLINE, R-PSSO-G2
- Package Style:SMALL OUTLINE
- Package Body Material:PLASTIC/EPOXY
- Operating Temperature-Max:175 °C
- Manufacturer Part Number:AUIRFR120ZTR
- Package Shape:RECTANGULAR
- Manufacturer:International Rectifier
- Number of Elements:1
- Part Life Cycle Code:Obsolete
- Ihs Manufacturer:INTERNATIONAL RECTIFIER CORP
- Risk Rank:5.16
- Part Package Code:TO-252AA
- Drain Current-Max (ID):8.7 A
- ECCN Code:EAR99
- Additional Feature:AVALANCHE RATED, ULTRA-LOW RESISTANCE
- Terminal Position:SINGLE
- Terminal Form:GULL WING
- Reach Compliance Code:unknown
- Pin Count:3
- JESD-30 Code:R-PSSO-G2
- Qualification Status:Not Qualified
- Configuration:SINGLE WITH BUILT-IN DIODE
- Operating Mode:ENHANCEMENT MODE
- Case Connection:DRAIN
- Transistor Application:SWITCHING
- Polarity/Channel Type:N-CHANNEL
- JEDEC-95 Code:TO-252AA
- Drain-source On Resistance-Max:0.19 Ω
- Pulsed Drain Current-Max (IDM):35 A
- DS Breakdown Voltage-Min:100 V
- Avalanche Energy Rating (Eas):20 mJ
- FET Technology:METAL-OXIDE SEMICONDUCTOR
Со склада 26735
Итого $0.00000