Главное Дискретные полупроводниковые Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные NE850R599A
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Спецификация Часто задаваемые вопросы
- Surface Mount:YES
- Number of Terminals:2
- Transistor Element Material:GALLIUM ARSENIDE
- Package Description:99, 2 PIN
- Package Style:FLANGE MOUNT
- Package Body Material:CERAMIC, METAL-SEALED COFIRED
- Reflow Temperature-Max (s):NOT SPECIFIED
- Rohs Code:No
- Manufacturer Part Number:NE850R599A
- Package Shape:RECTANGULAR
- Manufacturer:NEC Compound Semiconductor Devices Ltd
- Number of Elements:1
- Part Life Cycle Code:Transferred
- Ihs Manufacturer:NEC COMPOUND SEMICONDUCTOR DEVICES LTD
- Risk Rank:5.83
- Drain Current-Max (ID):0.56 A
- JESD-609 Code:e0
- Terminal Finish:TIN LEAD
- Additional Feature:HIGH RELIABILITY
- Terminal Position:DUAL
- Terminal Form:FLAT
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:compliant
- JESD-30 Code:R-CDFM-F2
- Qualification Status:Not Qualified
- Configuration:SINGLE
- Operating Mode:DEPLETION MODE
- Case Connection:SOURCE
- Transistor Application:AMPLIFIER
- Polarity/Channel Type:N-CHANNEL
- DS Breakdown Voltage-Min:15 V
- FET Technology:METAL SEMICONDUCTOR
- Highest Frequency Band:C BAND
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