Главное Дискретные полупроводниковые Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные IPP120N06S4-03
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IPP120N06S4-03
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Infineon
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Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
- TO-220-3
- Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Package / Case：TO-220-3
- Surface Mount：NO
- Number of Terminals：3
- Transistor Element Material：SILICON
- Channel Mode：Enhancement
- Part # Aliases：IPP120N06S403XK SP000396380 IPP120N06S403AKSA1
- Manufacturer：Infineon
- Id - Continuous Drain Current：120 A
- RoHS：Details
- Rds On - Drain-Source Resistance：2.8 mOhms
- Tradename：OptiMOS
- Qg - Gate Charge：125 nC
- Brand：Infineon Technologies
- Mounting Styles：Through Hole
- Factory Pack QuantityFactory Pack Quantity：500
- Minimum Operating Temperature：- 55 C
- Unit Weight：0.068784 oz
- Vgs - Gate-Source Voltage：- 20 V, + 20 V
- Maximum Operating Temperature：+ 175 C
- Transistor Polarity：N-Channel
- Pd - Power Dissipation：167 W
- Vgs th - Gate-Source Threshold Voltage：4 V
- Vds - Drain-Source Breakdown Voltage：60 V
- Package Body Material：PLASTIC/EPOXY
- Reflow Temperature-Max (s)：NOT SPECIFIED
- Operating Temperature-Max：175 °C
- Rohs Code：Yes
- Manufacturer Part Number：IPP120N06S4-03
- Package Shape：RECTANGULAR
- Number of Elements：1
- Part Life Cycle Code：Obsolete
- Ihs Manufacturer：INFINEON TECHNOLOGIES AG
- Risk Rank：8.62
- Part Package Code：TO-220AB
- Moisture Sensitivity Levels：1
- Package Style：FLANGE MOUNT
- Package Description：GREEN, PLASTIC, TO-220, 3 PIN
- Drain Current-Max (ID)：120 A
- Packaging：Tube
- Series：OptiMOS-T2
- JESD-609 Code：e3
- Pbfree Code：Yes
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Subcategory：MOSFETs
- Technology：Si
- Terminal Position：SINGLE
- Terminal Form：THROUGH-HOLE
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Reach Compliance Code：compliant
- Pin Count：3
- JESD-30 Code：R-PSFM-T3
- Qualification Status：Not Qualified
- Configuration：Single
- Number of Channels：1 Channel
- Operating Mode：ENHANCEMENT MODE
- Case Connection：DRAIN
- Polarity/Channel Type：N-CHANNEL
- Product Type：MOSFET
- Transistor Type：1 N-Channel
- JEDEC-95 Code：TO-220AB
- Drain Current-Max (Abs) (ID)：120 A
- Drain-source On Resistance-Max：0.0032 Ω
- Pulsed Drain Current-Max (IDM)：480 A
- DS Breakdown Voltage-Min：60 V
- Avalanche Energy Rating (Eas)：392 mJ
- FET Technology：METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)：167 W
- Product Category：MOSFET
- Length：10 mm
- Height：15.65 mm
- Width：4.4 mm
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