2SK3435-AZ

Name: Renesas Electronics America 2SK3435-AZ
Brand: Renesas Electronics America
Rating: 4.9 (16 reviews)

Renesas Electronics America
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TO-220-3
Nch Single Power MOSFET 60V 80A 14mohm MP-25/TO-220AB Automotive
Date Sheet

Lagernummer 1478

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Mounting Type：Through Hole
Package / Case：TO-220-3
Surface Mount：NO
Supplier Device Package：TO-220AB
Number of Terminals：3
Transistor Element Material：SILICON
Continuous Drain Current Id：80
Package：Bulk
Current - Continuous Drain (Id) @ 25℃：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Mfr：Renesas
Power Dissipation (Max)：1.5W (Ta), 84W (Tc)
Product Status：Obsolete
Package Description：MP-25, 3 PIN
Package Style：FLANGE MOUNT
Package Body Material：PLASTIC/EPOXY
Manufacturer Package Code：PRSS0004AH-A3
Reflow Temperature-Max (s)：NOT SPECIFIED
Rohs Code：Yes
Manufacturer Part Number：2SK3435-AZ
Package Shape：RECTANGULAR
Manufacturer：Renesas Electronics Corporation
Number of Elements：1
Part Life Cycle Code：Obsolete
Ihs Manufacturer：RENESAS ELECTRONICS CORP
Risk Rank：5.26
Part Package Code：MP-25
Drain Current-Max (ID)：80 A
Operating Temperature：150°C
Series：-
ECCN Code：EAR99
HTS Code：8541.29.00.95
Subcategory：FET General Purpose Power
Technology：MOSFET (Metal Oxide)
Terminal Position：SINGLE
Terminal Form：THROUGH-HOLE
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：compliant
Pin Count：3
JESD-30 Code：R-PSFM-T3
Qualification Status：Not Qualified
Brand Name：Renesas
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Power Dissipation：84
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：14mOhm @ 40A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds：3200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
Drain to Source Voltage (Vdss)：60 V
Vgs (Max)：±20V
Polarity/Channel Type：N-CHANNEL
JEDEC-95 Code：TO-220AB
Drain-source On Resistance-Max：0.022 Ω
Pulsed Drain Current-Max (IDM)：160 A
DS Breakdown Voltage-Min：60 V
Channel Type：N
Avalanche Energy Rating (Eas)：96 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：-

Со склада 1478

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