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APT33GF120BRG
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Microsemi Corporation
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Транзисторы - IGBT - Одинарные
- TO-247-3
- Trans IGBT Chip N-CH 1.2KV 52A 3-Pin(3+Tab) TO-247
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time：24 Weeks
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Weight：38.000013g
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：1.2kV
- Number of Elements：1
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tube
- Published：2001
- JESD-609 Code：e1
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin/Silver/Copper (Sn/Ag/Cu)
- Additional Feature：FAST SWITCHING
- Voltage - Rated DC：1.2kV
- Max Power Dissipation：297W
- Current Rating：33A
- Pin Count：3
- JESD-30 Code：R-PSFM-T3
- Element Configuration：Single
- Case Connection：COLLECTOR
- Input Type：Standard
- Transistor Application：POWER CONTROL
- Polarity/Channel Type：N-CHANNEL
- Collector Emitter Voltage (VCEO)：1.2kV
- Max Collector Current：52A
- JEDEC-95 Code：TO-247AD
- Voltage - Collector Emitter Breakdown (Max)：1200V
- Turn On Time：85 ns
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 25A
- Continuous Collector Current：52A
- Turn Off Time-Nom (toff)：284 ns
- IGBT Type：NPT
- Gate Charge：170nC
- Current - Collector Pulsed (Icm)：104A
- Td (on/off) @ 25°C：25ns/210ns
- Switching Energy：2.8mJ (on), 2.8mJ (off)
- Height：5.31mm
- Length：21.46mm
- Width：16.26mm
- Radiation Hardening：No
- RoHS Status：RoHS Compliant
- Lead Free：Lead Free
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