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APT75GP120B2G
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Microsemi Corporation
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Транзисторы - IGBT - Одинарные
- TO-247-3 Variant
- IGBT 1200V 100A 1042W TMAX
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time：23 Weeks
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Number of Pins：3
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：1.2kV
- Number of Elements：1
- Test Conditions：600V, 75A, 5 Ω, 15V
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tube
- Series：POWER MOS 7®
- Published：1999
- JESD-609 Code：e1
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- Terminal Finish：TIN SILVER COPPER
- Additional Feature：ULTRA FAST, LOW CONDUCTION LOSS
- Voltage - Rated DC：1.2kV
- Max Power Dissipation：1.042kW
- Current Rating：100A
- Pin Count：3
- Element Configuration：Single
- Case Connection：COLLECTOR
- Input Type：Standard
- Power - Max：1042W
- Transistor Application：POWER CONTROL
- Polarity/Channel Type：N-CHANNEL
- Collector Emitter Voltage (VCEO)：1.2kV
- Max Collector Current：100A
- Voltage - Collector Emitter Breakdown (Max)：1200V
- Turn On Time：60 ns
- Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 75A
- Continuous Collector Current：100A
- Turn Off Time-Nom (toff)：359 ns
- IGBT Type：PT
- Gate Charge：320nC
- Current - Collector Pulsed (Icm)：300A
- Td (on/off) @ 25°C：20ns/163ns
- Switching Energy：1620μJ (on), 2500μJ (off)
- Height：5.31mm
- Length：21.46mm
- Width：16.26mm
- Radiation Hardening：No
- RoHS Status：RoHS Compliant
- Lead Free：Lead Free
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