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IXGT64N60B3
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IXYS
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Транзисторы - IGBT - Одинарные
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- DISC IGBT PT-MID FREQUENCY TO-26
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time：26 Weeks
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Surface Mount：YES
- Transistor Element Material：SILICON
- Current-Collector (Ic) (Max)：64A
- Number of Elements：1
- Test Conditions：480V, 50A, 3 Ω, 15V
- Operating Temperature：-55°C~150°C TJ
- Series：GenX3™
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：2
- Terminal Finish：Matte Tin (Sn)
- Additional Feature：LOW CONDUCTION LOSS
- Terminal Position：SINGLE
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Reach Compliance Code：not_compliant
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- Pin Count：4
- JESD-30 Code：R-PSSO-G2
- Qualification Status：Not Qualified
- Configuration：SINGLE
- Case Connection：COLLECTOR
- Input Type：Standard
- Power - Max：460W
- Transistor Application：POWER CONTROL
- Polarity/Channel Type：N-CHANNEL
- Reverse Recovery Time：41ns
- Voltage - Collector Emitter Breakdown (Max)：600V
- Power Dissipation-Max (Abs)：460W
- Turn On Time：64 ns
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 50A
- Turn Off Time-Nom (toff)：326 ns
- IGBT Type：PT
- Gate Charge：168nC
- Current - Collector Pulsed (Icm)：400A
- Td (on/off) @ 25°C：25ns/138ns
- Switching Energy：1.5mJ (on), 1mJ (off)
- Gate-Emitter Voltage-Max：20V
- Gate-Emitter Thr Voltage-Max：5V
- Fall Time-Max (tf)：150ns
- RoHS Status：RoHS Compliant
Со склада 0
Итого $0.00000
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