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BFP640H6327XTSA1
- Infineon Technologies
- Транзисторы - Биполярные (BJT) - РЧ
- SC-82A, SOT-343
- Trans GP BJT NPN 4V 0.05A 4-Pin(3+Tab) SOT-343 T/R
- Date Sheet
Lagernummer 30346
- 1+: $0.29551
- 10+: $0.27878
- 100+: $0.26300
- 500+: $0.24811
- 1000+: $0.23407
Zwischensummenbetrag $0.29551
Спецификация Часто задаваемые вопросы
- Factory Lead Time:4 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:SC-82A, SOT-343
- Number of Pins:4
- Transistor Element Material:SILICON GERMANIUM
- Collector-Emitter Breakdown Voltage:4V
- Number of Elements:1
- Operating Temperature:150°C TJ
- Packaging:Tape & Reel (TR)
- Published:2005
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:4
- ECCN Code:EAR99
- Terminal Finish:Matte Tin (Sn)
- Additional Feature:LOW NOISE, HIGH RELIABILITY
- Max Power Dissipation:200mW
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Frequency:40GHz
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Base Part Number:BFP640
- Configuration:SINGLE
- Power Dissipation:200mW
- Transistor Application:AMPLIFIER
- Halogen Free:Halogen Free
- Polarity/Channel Type:NPN
- Transistor Type:NPN
- Collector Emitter Voltage (VCEO):4V
- Max Collector Current:50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 30mA 3V
- Gain:12.5dB
- Voltage - Collector Emitter Breakdown (Max):4.5V
- Transition Frequency:40000MHz
- Max Breakdown Voltage:4.5V
- Collector Base Voltage (VCBO):13V
- Emitter Base Voltage (VEBO):1.2V
- Collector-Base Capacitance-Max:0.2pF
- Noise Figure (dB Typ @ f):0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
- REACH SVHC:No SVHC
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
Со склада 30346
- 1+: $0.29551
- 10+: $0.27878
- 100+: $0.26300
- 500+: $0.24811
- 1000+: $0.23407
Итого $0.29551