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MMBTH10LT1G
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ON Semiconductor
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Транзисторы - Биполярные (BJT) - РЧ
- TO-236-3, SC-59, SOT-23-3
- TRANS SS VHF MIXER NPN 25V SOT23
Date Sheet
Lagernummer 22157
- 1+： $0.11460
- 10+： $0.10812
- 100+： $0.10200
- 500+： $0.09622
- 1000+： $0.09078
Zwischensummenbetrag $0.11460
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time：8 Weeks
- Contact Plating：Tin
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Surface Mount：YES
- Number of Pins：3
- Weight：4.535924g
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：25V
- Number of Elements：1
- hFEMin：60
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tape & Reel (TR)
- Published：2001
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- Termination：SMD/SMT
- ECCN Code：EAR99
- Voltage - Rated DC：25V
- Max Power Dissipation：225mW
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：260
- Current Rating：4mA
- Frequency：650MHz
- Time@Peak Reflow Temperature-Max (s)：40
- Base Part Number：MMBTH10
- Pin Count：3
- Element Configuration：Single
- Power Dissipation：225mW
- Halogen Free：Halogen Free
- Gain Bandwidth Product：650MHz
- Polarity/Channel Type：NPN
- Transistor Type：NPN
- Collector Emitter Voltage (VCEO)：25V
- Max Collector Current：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 4mA 10V
- Transition Frequency：650MHz
- Max Breakdown Voltage：25V
- Collector Base Voltage (VCBO)：30V
- Emitter Base Voltage (VEBO)：3V
- Max Junction Temperature (Tj)：150°C
- Collector-Base Capacitance-Max：0.7pF
- Height：1.11mm
- Length：3.04mm
- Width：1.4mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
Со склада 22157
- 1+： $0.11460
- 10+： $0.10812
- 100+： $0.10200
- 500+： $0.09622
- 1000+： $0.09078
Итого $0.11460
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