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BFR181WH6327XTSA1
- Infineon Technologies
- Транзисторы - Биполярные (BJT) - РЧ
- SC-70, SOT-323
- Trans GP BJT NPN 12V 0.02A 3-Pin SOT-323 T/R
- Date Sheet
Lagernummer 38
- 1+: $0.03516
- 10+: $0.03317
- 100+: $0.03129
- 500+: $0.02952
- 1000+: $0.02785
Zwischensummenbetrag $0.03516
Спецификация Часто задаваемые вопросы
- Factory Lead Time:4 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:SC-70, SOT-323
- Number of Pins:3
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:12V
- Number of Elements:1
- hFEMin:50
- Operating Temperature:150°C TJ
- Packaging:Tape & Reel (TR)
- Published:2014
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- Termination:SMD/SMT
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Max Power Dissipation:175mW
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Frequency:8GHz
- Base Part Number:BFR181
- Configuration:SINGLE
- Test Frequency:900MHz
- Power Dissipation:175mW
- Transistor Application:AMPLIFIER
- Halogen Free:Halogen Free
- Polarity/Channel Type:NPN
- Transistor Type:NPN
- Collector Emitter Voltage (VCEO):12V
- Max Collector Current:20mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA 8V
- Gain:19dB
- Transition Frequency:8000MHz
- Max Breakdown Voltage:12V
- Collector Base Voltage (VCBO):20V
- Emitter Base Voltage (VEBO):2V
- Collector-Base Capacitance-Max:0.45pF
- Noise Figure (dB Typ @ f):0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
Со склада 38
- 1+: $0.03516
- 10+: $0.03317
- 100+: $0.03129
- 500+: $0.02952
- 1000+: $0.02785
Итого $0.03516